2SA966_07 SPC, CIRCUITO, LA FUNCIóN
Nombre de la pieza: 2SA966_07
Fabricante: Toshiba Semiconductor
Embalaje:
Descripción:
Pins:
Temperatura: Min °C | Max °C
Tamaño: KB
- 2SA963
SILICON EPITAXIAL PLANAR - 2SA963P
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 - 2SA963Q
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 - 2SA963R
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 - 2SA965
TOSHIBA TRANSISTOR SILICON EPITAXIAL TYPE PROCESS) - 2SA96507
Power Amplifier ApplicationsDriver-Stage Amplifier Applications - 2SA965O
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR - 2SA965Y
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR - 2SA965_07
Power Amplifier ApplicationsDriver-Stage Amplifier Applications - 2SA966
TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) - 2SA96607
Audio Power Amplifier Applications - 2SA966O
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-92VAR - 2SA966Y
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-92VAR - 2SA966_07
Audio Power Amplifier Applications - 2SA967
TRANSISTOR | BJT | PNP | 30MA I(C) | MICRO-T